| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-220-253 |
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| Auteur | Rechercher : Aebi, P.; Rechercher : Tyliszczak, T.; Rechercher : Hitchcock, A. P.; Rechercher : Baribeau, J. -M.1; Rechercher : Lockwood, D. J.1; Rechercher : Jackman, T. E.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | We illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to determine the amount of interface mixing and strain condition in the study of (SimGen)p short-period superlattices. It is found that for n < 4, the number of Ge and Si nearest neighbours to Ge atoms is consistent with ∼25% interfacial mixing and that the Ge-Ge bond length corresponds to that of coherently strained Ge. The Si-Ge bond length is shorter, close to that of a strained Si0.25Ge0.75 alloy. For n > 4, the Ge-Ge bond length and the number of Si-Ge nearest neighbours increase significantly consistent with partial relaxation and interdiffusion. Raman scattering spectroscopy and x-ray reflectometry measurements are also presented and are consistent with the conclusions of the EXAFS analysis. |
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| Date de publication | 1991-01 |
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| Maison d’édition | Cambridge University Press |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23001770 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | d5991414-c625-4b87-b871-77fff7517bde |
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| Enregistrement créé | 2017-03-31 |
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| Enregistrement modifié | 2020-03-17 |
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