| DOI | Resolve DOI: https://doi.org/10.1557/PROC-220-253 |
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| Author | Search for: Aebi, P.; Search for: Tyliszczak, T.; Search for: Hitchcock, A. P.; Search for: Baribeau, J. -M.1; Search for: Lockwood, D. J.1; Search for: Jackman, T. E.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to determine the amount of interface mixing and strain condition in the study of (SimGen)p short-period superlattices. It is found that for n < 4, the number of Ge and Si nearest neighbours to Ge atoms is consistent with ∼25% interfacial mixing and that the Ge-Ge bond length corresponds to that of coherently strained Ge. The Si-Ge bond length is shorter, close to that of a strained Si0.25Ge0.75 alloy. For n > 4, the Ge-Ge bond length and the number of Si-Ge nearest neighbours increase significantly consistent with partial relaxation and interdiffusion. Raman scattering spectroscopy and x-ray reflectometry measurements are also presented and are consistent with the conclusions of the EXAFS analysis. |
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| Publication date | 1991-01 |
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| Publisher | Cambridge University Press |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23001770 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d5991414-c625-4b87-b871-77fff7517bde |
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| Record created | 2017-03-31 |
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| Record modified | 2020-03-17 |
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