| DOI | Trouver le DOI : https://doi.org/10.1149/1.2981149 |
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| Auteur | Rechercher : Jiang, Weihong1; Rechercher : Landheer, Dolf1; Rechercher : Lopinski, Gregory; Rechercher : Mckinnon, W.Ross1; Rechercher : Rankin, Alasdair; Rechercher : Ghias-begloo, Ehsan; Rechercher : Griffin, Ryan; Rechercher : Tarr, N. Garry; Rechercher : Tait, Niall; Rechercher : Liu, Jian; Rechercher : Lennard, William |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 214th ECS Meeting, October 12-17, 2008, Honolulu, HI |
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| Résumé | Field-effect sensors with hafnium silicate gate insulators were fabricated following standard CMOS processes and compatible post-processes. The floating gates were functionalized with glycidoxypropyltrimethoxy silane and amine-terminated oligonucleotide probes. The pH sensitivity of the silicate surface decreased from 31.4 mV/pH to 24.6 mV/pH after functionalization due to passivation of a significant fraction of the amphoteric proton binding sites. A threshold voltage shift of 33 mV was observed as the buffer solution concentration changed from 0.015 M to 0.3 M after DNA probe molecule attachment. The hybridization caused a net increase in this shift of 3mV. With the help of a model which includes the solution of the Poisson-Boltzmann and proton site-binding at the gate, methods of achieving higher sensitivity are discussed. |
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| Date de publication | 2008 |
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| Maison d’édition | ECS |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23001041 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | a76e58e2-bd4c-436d-8680-370af96e5171 |
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| Enregistrement créé | 2016-12-02 |
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| Enregistrement modifié | 2020-04-15 |
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