| DOI | Resolve DOI: https://doi.org/10.1149/1.2981149 |
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| Author | Search for: Jiang, Weihong1; Search for: Landheer, Dolf1; Search for: Lopinski, Gregory; Search for: Mckinnon, W.Ross1; Search for: Rankin, Alasdair; Search for: Ghias-begloo, Ehsan; Search for: Griffin, Ryan; Search for: Tarr, N. Garry; Search for: Tait, Niall; Search for: Liu, Jian; Search for: Lennard, William |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 214th ECS Meeting, October 12-17, 2008, Honolulu, HI |
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| Abstract | Field-effect sensors with hafnium silicate gate insulators were fabricated following standard CMOS processes and compatible post-processes. The floating gates were functionalized with glycidoxypropyltrimethoxy silane and amine-terminated oligonucleotide probes. The pH sensitivity of the silicate surface decreased from 31.4 mV/pH to 24.6 mV/pH after functionalization due to passivation of a significant fraction of the amphoteric proton binding sites. A threshold voltage shift of 33 mV was observed as the buffer solution concentration changed from 0.015 M to 0.3 M after DNA probe molecule attachment. The hybridization caused a net increase in this shift of 3mV. With the help of a model which includes the solution of the Poisson-Boltzmann and proton site-binding at the gate, methods of achieving higher sensitivity are discussed. |
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| Publication date | 2008 |
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| Publisher | ECS |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23001041 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a76e58e2-bd4c-436d-8680-370af96e5171 |
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| Record created | 2016-12-02 |
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| Record modified | 2020-04-15 |
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