| Téléchargement | - Voir le manuscrit accepté : Probing the Composition of Ge Dots and Si1-xGex Island Superlattices (PDF, 862 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1116/1.2186658 |
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| Auteur | Rechercher : Baribeau, Jean-Marc1; Rechercher : Wu, X.1; Rechercher : Lockwood, David1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | We use analytical transmission electron microscopy to map the composition of Ge dot and Si/Si1−xGex island structures grown on (001) Si by molecular beam epitaxy or ultrahigh vacuum chemical vapor deposition. Energy-dispersive x-ray spectroscopy reveals that nominally pure Ge dots grown by molecular beam epitaxy at 650 °C exhibit considerable intermixing with the average Ge composition typically increasing from nearly zero at the base to about 50% at the top of the dot. In pyramid shaped dots, the Ge composition increases linearly up to the top of the dot, while for dome dots, a saturation of the incorporation rate is seen beyond a distance of 7 nm from the substrate interface. Probing of Si/Si1−xGex island superlattices also reveals large Si/Ge intermixing with a Ge accumulation at the crest and Ge depletion at the troughs of the islands. These results are corroborated by x-ray diffraction and Raman scattering measurements. |
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| Date de publication | 2006 |
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| Dans | |
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| Numéro NPARC | 12744813 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 9ae8b7a2-8abc-4b46-93d2-fab7425ea399 |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-04-22 |
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