| Download | - View accepted manuscript: Probing the Composition of Ge Dots and Si1-xGex Island Superlattices (PDF, 862 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1116/1.2186658 |
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| Author | Search for: Baribeau, Jean-Marc1; Search for: Wu, X.1; Search for: Lockwood, David1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We use analytical transmission electron microscopy to map the composition of Ge dot and Si/Si1−xGex island structures grown on (001) Si by molecular beam epitaxy or ultrahigh vacuum chemical vapor deposition. Energy-dispersive x-ray spectroscopy reveals that nominally pure Ge dots grown by molecular beam epitaxy at 650 °C exhibit considerable intermixing with the average Ge composition typically increasing from nearly zero at the base to about 50% at the top of the dot. In pyramid shaped dots, the Ge composition increases linearly up to the top of the dot, while for dome dots, a saturation of the incorporation rate is seen beyond a distance of 7 nm from the substrate interface. Probing of Si/Si1−xGex island superlattices also reveals large Si/Ge intermixing with a Ge accumulation at the crest and Ge depletion at the troughs of the islands. These results are corroborated by x-ray diffraction and Raman scattering measurements. |
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| Publication date | 2006 |
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| In | |
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| NPARC number | 12744813 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9ae8b7a2-8abc-4b46-93d2-fab7425ea399 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-22 |
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