Performance investigations of InAs/InP quantum-dash semiconductor optical amplifiers with different numbers of dash layers

Par Conseil national de recherches du Canada

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DOI	Trouver le DOI : https://doi.org/10.3390/mi14122230
Auteur	Rechercher : Mao, Youxin¹Identifiant ORCID : https://orcid.org/0000-0002-5086-2296; Rechercher : Xie, Xiaoran¹; Rechercher : Song, Chun-Ying¹; Rechercher : Lu, Zhenguo¹; Rechercher : Poole, Philip J.¹; Rechercher : Liu, Jiaren¹; Rechercher : Toreja, Mia Grace¹; Rechercher : Qi, Yang¹Identifiant ORCID : https://orcid.org/0000-0002-0530-8640; Rechercher : Liu, Guocheng¹; Rechercher : Barrios, Pedro¹; Rechercher : Poitras, Daniel¹Identifiant ORCID : https://orcid.org/0000-0003-4403-8214; Rechercher : Weber, John¹; Rechercher : Zhao, Ping¹; Rechercher : Vachon, Martin¹; Rechercher : Rahim, Mohamed¹; Rechercher : Ma, Penghui¹; Rechercher : Chen, Silas¹; Rechercher : Atieh, Ahmad Identifiant ORCID : https://orcid.org/0000-0002-9880-5602
Affiliation	Conseil national de recherches du Canada. Électronique et photonique avancées
Bailleur de fonds	Rechercher : National Research Council of Canada
Format	Texte, Article
Sujet	semiconductor optical amplifier; InAs/InP quantum dot/dash; chip gain; 3 dB saturated output power; noise figure
Résumé	We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18.2 dBm) in a shorter wavelength range. The noise figure (NF) of the SOAs increased nearly linearly with the number of Qdash layers. The longest gain peak wavelength of 1570 nm was observed for the 12-layer Qdash SOA. The most balanced performance was obtained with a five-layer Qdash SOA, with a 25.4 dB small-signal chip gain, 15.2 dBm 3 dB output saturated power, and 5.7 dB NF at 1532 nm, 300 mA and 25 °C. These results are better than those of quantum well SOAs reported in a recent review paper. The high performance of InAs/InP Qdash SOAs with different Qdash layers shown in this paper could be important for many applications with distinct requirements under uncooled scenarios.
Date de publication	2023-12
Maison d’édition	MDPI
Licence	Creative Commons, Attribution 4.0 International (CC BY 4.0) https://creativecommons.org/licenses/by/4.0/deed.fr
Dans	Micromachines 14, nº 12, 2230 (décembre 2023) : 1–10.
Langue	anglais
Publications évaluées par des pairs	Oui
Identificateur	mi14122230
Exporter la notice	Exporter en format RIS
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Identificateur de l’enregistrement	54606653-23b3-4153-877b-35a2bf5b69d7
Enregistrement créé	2024-07-15
Enregistrement modifié	2024-07-23

Date de modification :: 2025-02-07