Performance investigations of InAs/InP quantum-dash semiconductor optical amplifiers with different numbers of dash layers

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DOI	Resolve DOI: https://doi.org/10.3390/mi14122230
Author	Search for: Mao, Youxin¹ORCID identifier: https://orcid.org/0000-0002-5086-2296; Search for: Xie, Xiaoran¹; Search for: Song, Chun-Ying¹; Search for: Lu, Zhenguo¹; Search for: Poole, Philip J.¹; Search for: Liu, Jiaren¹; Search for: Toreja, Mia Grace¹; Search for: Qi, Yang¹ORCID identifier: https://orcid.org/0000-0002-0530-8640; Search for: Liu, Guocheng¹; Search for: Barrios, Pedro¹; Search for: Poitras, Daniel¹ORCID identifier: https://orcid.org/0000-0003-4403-8214; Search for: Weber, John¹; Search for: Zhao, Ping¹; Search for: Vachon, Martin¹; Search for: Rahim, Mohamed¹; Search for: Ma, Penghui¹; Search for: Chen, Silas¹; Search for: Atieh, Ahmad ORCID identifier: https://orcid.org/0000-0002-9880-5602
Affiliation	National Research Council of Canada. Advanced Electronics and Photonics
Funder	Search for: National Research Council of Canada
Format	Text, Article
Subject	semiconductor optical amplifier; InAs/InP quantum dot/dash; chip gain; 3 dB saturated output power; noise figure
Abstract	We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18.2 dBm) in a shorter wavelength range. The noise figure (NF) of the SOAs increased nearly linearly with the number of Qdash layers. The longest gain peak wavelength of 1570 nm was observed for the 12-layer Qdash SOA. The most balanced performance was obtained with a five-layer Qdash SOA, with a 25.4 dB small-signal chip gain, 15.2 dBm 3 dB output saturated power, and 5.7 dB NF at 1532 nm, 300 mA and 25 °C. These results are better than those of quantum well SOAs reported in a recent review paper. The high performance of InAs/InP Qdash SOAs with different Qdash layers shown in this paper could be important for many applications with distinct requirements under uncooled scenarios.
Publication date	2023-12
Publisher	MDPI
Licence	Creative Commons, Attribution 4.0 International (CC BY 4.0) https://creativecommons.org/licenses/by/4.0/
In	Micromachines 14, no. 12, 2230 (December 2023): 1–10.
Language	English
Peer reviewed	Yes
Identifier	mi14122230
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Record identifier	54606653-23b3-4153-877b-35a2bf5b69d7
Record created	2024-07-15
Record modified	2024-07-23

Date modified:: 2025-06-18