| Téléchargement | - Voir le manuscrit accepté : Interband Bloch oscillation mechanism for high-harmonic generation in semiconductor crystals (PDF, 502 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1103/PhysRevA.92.033845 |
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| Auteur | Rechercher : McDonald, C. R.; Rechercher : Vampa, G.; Rechercher : Corkum, P. B.1; Rechercher : Brabec, T. |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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| Format | Texte, Article |
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| Sujet | harmonic analysis; optical parametric oscillators; semiconducting indium gallium arsenide; Bloch oscillations; electron hole; electron hole pairs; first Brillouin zone; high harmonic generation; midinfrared lasers; recollision; semiconductor crystals; harmonic generation |
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| Résumé | High harmonic generation in semiconductors is analyzed for high mid-infrared laser intensities for which the electron-hole pair is driven beyond the first Brillouin zone and exhibits Bloch oscillations. We find that even a two-band analysis exhibits second and higher plateaus. Whereas the first plateau is shown to be consistent with high harmonic generation through electron-hole recollision, the higher plateaus arise from dynamic Bloch oscillations; however, the driving process is interband in nature, in contrast to the generally accepted intraband Bloch oscillation mechanism. Energy conservation is fulfilled, as harmonics beyond the first plateau come from a cascaded nonlinearity. |
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| Date de publication | 2015-09-23 |
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| Maison d’édition | American Physical Society |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21276996 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 3af8f21e-a3ca-4de8-9fde-67ed341e791b |
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| Enregistrement créé | 2015-11-10 |
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| Enregistrement modifié | 2020-06-04 |
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