| Download | - View accepted manuscript: Interband Bloch oscillation mechanism for high-harmonic generation in semiconductor crystals (PDF, 502 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevA.92.033845 |
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| Author | Search for: McDonald, C. R.; Search for: Vampa, G.; Search for: Corkum, P. B.1; Search for: Brabec, T. |
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| Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Subject | harmonic analysis; optical parametric oscillators; semiconducting indium gallium arsenide; Bloch oscillations; electron hole; electron hole pairs; first Brillouin zone; high harmonic generation; midinfrared lasers; recollision; semiconductor crystals; harmonic generation |
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| Abstract | High harmonic generation in semiconductors is analyzed for high mid-infrared laser intensities for which the electron-hole pair is driven beyond the first Brillouin zone and exhibits Bloch oscillations. We find that even a two-band analysis exhibits second and higher plateaus. Whereas the first plateau is shown to be consistent with high harmonic generation through electron-hole recollision, the higher plateaus arise from dynamic Bloch oscillations; however, the driving process is interband in nature, in contrast to the generally accepted intraband Bloch oscillation mechanism. Energy conservation is fulfilled, as harmonics beyond the first plateau come from a cascaded nonlinearity. |
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| Publication date | 2015-09-23 |
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| Publisher | American Physical Society |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276996 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3af8f21e-a3ca-4de8-9fde-67ed341e791b |
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| Record created | 2015-11-10 |
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| Record modified | 2020-06-04 |
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