Mid- and near-infrared Si waveguides for sensing applications

From National Research Council Canada

DOI	Resolve DOI: https://doi.org/10.1117/12.2267868
Author	Search for: Alonso-Ramos, Carlos A.; Search for: Le Roux, Xavier; Search for: Benedikovic, Daniel; Search for: Vakarin, Vladyslav; Search for: Durán-Valdeiglesias, Elena; Search for: Pérez-Galacho, Diego; Search for: Cassan, Eric; Search for: Marris-Morini, Delphine; Search for: Cheben, Pavel¹ORCID identifier: https://orcid.org/0000-0003-4232-9130; Search for: Vivien, Laurent
Affiliation	National Research Council of Canada. Medical Devices
Format	Text, Address
Conference	SPIE Microtechnologies, May 8-10, 2017, Barcelona, Spain
Abstract	The large transparency window of silicon (1.1 - 8 μm wavelength range) makes it a promising material for the implementation of on-chip sensors operating over an ultra-wide wavelength range. However, the implementation of the silicon-on-insulator platform is restricted by the absorption of buried oxide layer for wavelengths above 4 μm. Here, we report our advances in development of silicon waveguides for broadband operation extending from near- to mid-infrared wavelengths. We present suspended silicon waveguides that exploit a novel periodic corrugation approach to circumvent the buried oxide absorption problem and provide effective single mode operation simultaneously for near- and mid-infrared wavelengths.
Publication date	2017-06-16
Publisher	Society of Photo-Optical Instrumentation Engineers (SPIE)
In	Integrated Photonics: Materials, Devices, and Applications IV (16 June 2017): 102490A–.
Series	Proceedings of SPIE, no. 10249.
Language	English
Peer reviewed	Yes
NPARC number	23002297
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Record identifier	e26a94ae-38ae-4b36-bc58-7f5bae3b7190
Record created	2017-10-12
Record modified	2021-04-23

Date modified:: 2025-11-18