| DOI | Resolve DOI: https://doi.org/10.1063/1.118320 |
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| Author | Search for: Ershov, M.; Search for: Liu, H.; Search for: Buchanan, Margaret1; Search for: Wasilewski, Zbigniew1; Search for: Ryzhii, V. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; gallium arsenide; infrared detectors; photoconductivity; photodetectors; photoexcitation; semiconductor quantum wells |
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| Abstract | Nonlinear photoconductivity effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease resulting in a decrease of responsivity. |
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| Publication date | 1997-01-27 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12339196 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c10251f2-fad9-4f0c-b5b4-32ab393247ac |
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| Record created | 2009-09-11 |
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| Record modified | 2023-05-10 |
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