RF passive devices on Si with excellent performance, close to ideal devices designed by electro-magnetic simulation

From National Research Council Canada

Alternative titleIEEE Int’l Electron Device Meeting Technical Digest
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: 1 ; Search for:
Name affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText
TypeArticle
ConferenceIEEE Int’l Electron Device Meeting, 2003
Volume375
NPARC number3539221
Export citationExport as RIS
Report a correctionReport a correction
Record identifierbb431d21-f8a3-44c2-9656-11baec684532
Record created2009-03-01
Record modified2019-02-14
Date modified: