RF passive devices on Si with excellent performance, close to ideal devices designed by electro-magnetic simulation
RF passive devices on Si with excellent performance, close to ideal devices designed by electro-magnetic simulation
| Alternative title | IEEE Int’l Electron Device Meeting Technical Digest |
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| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: 1; Search for: |
| Affiliation |
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| Format | Text, Article |
| Conference | IEEE Int’l Electron Device Meeting, 2003 |
| NPARC number | 3539221 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | bb431d21-f8a3-44c2-9656-11baec684532 |
| Record created | 2009-03-01 |
| Record modified | 2020-04-16 |
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