| Download | - View full text: Resolving and tuning carrier capture rates at a single silicon atom gap state (PDF, 1 MB)
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| DOI | Resolve DOI: http://doi.org/10.1021/acsnano.7b07068 |
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| Author | Search for: Rashidi, Mohammad1 ; Search for: Lloyd, Erika; Search for: Huff, Taleana R.; Search for: Achal, Roshan; Search for: Taucer, Marco; Search for: Croshaw, Jeremiah J.; Search for: Wolkow, Robert A.1 |
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| Name affiliation | - National Research Council Canada. Nanotechnology
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| Type | Article |
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| Journal title | ACS Nano |
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| ISSN | 1936-0851
1936-086X |
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| Subject | carrier-capture rates; dangling bonds; noncontact atomic force microscopy; silicon; time-resolved scanning tunneling microscopy |
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| Abstract | We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is employed to directly measure the carrier capture rates on the nanosecond time scale. A characteristic negative differential resistance (NDR) feature is evident in the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of DBs on both n- and p-type doped samples. We find that a common model accounts for both observations. Atom-specific Kelvin probe force microscopy (KPFM) measurements confirm the energetic position of the DB’s charge transition levels, corroborating STS studies. We show that under different tip-induced fields the DB can be supplied with electrons from two distinct reservoirs: the bulk conduction band and/or the valence band. We measure the filling and emptying rates of the DBs in the energy regime where electrons are supplied by the bulk valence band. We show that adding point charges in the vicinity of a DB shifts observed STS and NDR features due to Coulombic interactions. |
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| Publication date | 2017-11-01 |
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| Publisher | ACS |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23002433 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction |
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Record identifier | b681fbd1-f23a-452f-b3de-d297f86471a9 | | Record created | 2017-11-10 |
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| Record modified | 2017-11-10 |
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