Resolving and tuning carrier capture rates at a single silicon atom gap state
Resolving and tuning carrier capture rates at a single silicon atom gap state
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DOI | Resolve DOI: https://doi.org/10.1021/acsnano.7b07068 |
Author | Search for: Rashidi, Mohammad1; Search for: Lloyd, Erika; Search for: Huff, Taleana R.; Search for: Achal, Roshan; Search for: Taucer, Marco; Search for: Croshaw, Jeremiah J.; Search for: Wolkow, Robert A.1 |
Name affiliation |
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Format | Text, Article |
Journal title | ACS Nano |
ISSN | 1936-0851 1936-086X |
Subject | carrier-capture rates; dangling bonds; noncontact atomic force microscopy; silicon; time-resolved scanning tunneling microscopy |
Abstract | |
Publication date | 2017-11-01 |
Publisher | ACS |
Language | English |
Peer reviewed | Yes |
NPARC number | 23002433 |
Export citation | Export as RIS |
Report a correction | Report a correction |
Record identifier | b681fbd1-f23a-452f-b3de-d297f86471a9 |
Record created | 2017-11-10 |
Record modified | 2020-05-30 |