| DOI | Resolve DOI: https://doi.org/10.1116/1.4939754 |
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| Author | Search for: Cheriton, Ross; Search for: Wilkins, Matthew M.; Search for: Sharma, Pratibha; Search for: Valdivia, Christopher E.; Search for: Trojnar, Anna H.; Search for: Schriemer, Henry; Search for: Hinzer, Karin; Search for: Gupta, James1; Search for: Bouzazi, Boussairi; Search for: Kolhatkar, Gitanjali; Search for: Boucherif, Abderraouf; Search for: Jaouad, Abdelatif; Search for: Fafard, Simon; Search for: Aimez, Vincent; Search for: Arès, Richard |
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| Affiliation | - National Research Council of Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Subject | Carrier mobility; Photovoltaic cells; Concentrator photovoltaic systems; Design optimization; Drift-diffusion simulation; Germanium substrates; Lattice-matched; Material systems; Realistic materials; Sun illumination; Solar cells |
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| Abstract | The InGaAsN(Sb) material system is an attractive candidate for use in lattice-matched four-junction (4J) solar cells based on germanium substrates. Design optimizations for an InGaAsN(Sb) subcell are proposed for optimal power conversion efficiency within a 4J solar cell under a highly concentrated AM1.5D solar spectrum. The performance of the subcell is modeled using drift-diffusion simulations using Crosslight Apsys. An InGaAsN(Sb) test subcell was fabricated to obtain realistic materials parameters for the optimization of subcell performance. A thin InGaAsN(Sb) subcell is suggested for operation at 1000 Sun illumination intensities at low carrier lifetimes and mobilities. |
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| Publication date | 2016-01-08 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21277459 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b35d0e37-a5a3-4534-9c5f-64aca9836510 |
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| Record created | 2016-03-09 |
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| Record modified | 2020-03-16 |
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