Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition

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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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Subjectannealing; CVD; diffusion; germanium silicides; interface structure; photoluminescence; quantum wells; silicon; strains
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NRC numberNRC-INMS-1123
NPARC number5763471
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Record identifierb1a33b57-8703-455a-87c4-d4ee95652628
Record created2009-03-29
Record modified2020-03-20
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