Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.117609
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Name affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Journal titleApplied Physics Letters
ISSN0003-6951
Volume69
Issue10
Pages14441446
Subjectannealing; CVD; diffusion; germanium silicides; interface structure; photoluminescence; quantum wells; silicon; strains
Abstract
Publication date
LanguageEnglish
Identifier10100234
NRC numberNRC-INMS-1123
NPARC number5763471
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Record identifierb1a33b57-8703-455a-87c4-d4ee95652628
Record created2009-03-29
Record modified2020-03-20
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