Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition
Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition
DOI | Resolve DOI: https://doi.org/10.1063/1.117609 |
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Author | Search for: Lafontaine, H.1; Search for: Houghton, D. C.1; Search for: Rowell, N. L.1; Search for: Aers, G.C.1 |
Name affiliation |
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Format | Text, Article |
Journal title | Applied Physics Letters |
ISSN | 0003-6951 |
Volume | 69 |
Issue | 10 |
Pages | 1444–1446 |
Subject | annealing; CVD; diffusion; germanium silicides; interface structure; photoluminescence; quantum wells; silicon; strains |
Abstract | |
Publication date | 1996-09 |
Language | English |
Identifier | 10100234 |
NRC number | NRC-INMS-1123 |
NPARC number | 5763471 |
Export citation | Export as RIS |
Report a correction | Report a correction | Record identifier | b1a33b57-8703-455a-87c4-d4ee95652628 |
Record created | 2009-03-29 |
Record modified | 2020-03-20 |