| DOI | Resolve DOI: https://doi.org/10.1063/1.350433 |
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| Author | Search for: Rowell, N. L.1; Search for: Noël, J.-P.1; Search for: Wang, A.1; Search for: Namavar, F.; Search for: Perry, C. H.; Search for: Soref, R. A. |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Abstract | Low temperature photoluminescence due to the self-annihilation of bound excitons has been observed in Si1−xGex strained layers grown using atmospheric pressure chemical vapor deposition. Samples were grown at temperatures near 1000 °C with growth rates up to 1000 nm per minute allowing short growth times, thus preventing extensive interdiffusion at layer interfaces. Well-resolved, bulk-like photoluminescence spectra with narrow no phonon linewidths were observed from strained SiGe material indicating it to be of suitable electronic quality. For a sample consisting of 120 nm of Si0.92Ge0.08 capped with 90 nm of Si on a Si(100) substrate, the photoluminescence spectrum exhibited Si1−xGex bound exciton lines with resolved no phonon and transverse optic phonon components. |
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| Publication date | 1992-06-15 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | NRC-INMS-1151 |
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| NPARC number | 8899468 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 901e8bc8-9e03-4390-896e-5d55cb9129b7 |
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| Record created | 2009-04-22 |
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| Record modified | 2020-04-24 |
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