| DOI | Trouver le DOI : https://doi.org/10.1063/1.350433 |
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| Auteur | Rechercher : Rowell, N. L.1; Rechercher : Noël, J.-P.1; Rechercher : Wang, A.1; Rechercher : Namavar, F.; Rechercher : Perry, C. H.; Rechercher : Soref, R. A. |
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| Affiliation | - Conseil national de recherches Canada
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| Format | Texte, Article |
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| Résumé | Low temperature photoluminescence due to the self-annihilation of bound excitons has been observed in Si1−xGex strained layers grown using atmospheric pressure chemical vapor deposition. Samples were grown at temperatures near 1000 °C with growth rates up to 1000 nm per minute allowing short growth times, thus preventing extensive interdiffusion at layer interfaces. Well-resolved, bulk-like photoluminescence spectra with narrow no phonon linewidths were observed from strained SiGe material indicating it to be of suitable electronic quality. For a sample consisting of 120 nm of Si0.92Ge0.08 capped with 90 nm of Si on a Si(100) substrate, the photoluminescence spectrum exhibited Si1−xGex bound exciton lines with resolved no phonon and transverse optic phonon components. |
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| Date de publication | 1992-06-15 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro du CNRC | NRC-INMS-1151 |
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| Numéro NPARC | 8899468 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 901e8bc8-9e03-4390-896e-5d55cb9129b7 |
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| Enregistrement créé | 2009-04-22 |
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| Enregistrement modifié | 2020-04-24 |
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