Comparison of ion implantation aroaches in the fabrication of AlGaN/GaN HFETs: classical vs through the gate metal
Comparison of ion implantation aroaches in the fabrication of AlGaN/GaN HFETs: classical vs through the gate metal
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Format | Text, Article |
Conference | IPAP Conference Series 1, 2000, Tokyo |
Publication date | ca 2000 |
NPARC number | 5212406 |
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Record identifier | 8c5fb574-c501-447c-8880-fa21421e2fd8 |
Record created | 2008-12-02 |
Record modified | 2024-12-19 |
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