Language selection

Government of Canada / Gouvernement du Canada

Search

Comparison of ion implantation aroaches in the fabrication of AlGaN/GaN HFETs: classical vs through the gate metal

From National Research Council Canada

AuthorSearch for: ; Search for: ; Search for: ; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
ConferenceIPAP Conference Series 1, 2000, Tokyo
Publication date
NPARC number5212406
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier8c5fb574-c501-447c-8880-fa21421e2fd8
Record created2008-12-02
Record modified2024-12-19
Date modified: