| Download | - View accepted manuscript: Comparison of Ion Implantation Aroaches in the Fabrication of AlGaN/GaN HFETs: Classical vs Through the Gate Metal (PDF, 1.8 MiB)
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| Author | Search for: DiSanto, D.; Search for: Maher, H.; Search for: Bolognesi, C.; Search for: Webb, James1 |
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| Affiliation | - National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Conference | IPAP Conference Series 1, 2000, Tokyo |
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| NPARC number | 5212406 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8c5fb574-c501-447c-8880-fa21421e2fd8 |
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| Record created | 2008-12-02 |
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| Record modified | 2024-03-01 |
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