| DOI | Resolve DOI: https://doi.org/10.1063/1.326386 |
|---|
| Author | Search for: Corkum, P.B.1; Search for: Alcock, A.J.1; Search for: Leopold, K.E.1 |
|---|
| Affiliation | - National Research Council Canada
|
|---|
| Format | Text, Article |
|---|
| Subject | Electron beams - Applications; Infrared radiation - Transmission; Lasers, carbon dioxide - Fusion Applications; Semiconductor materials |
|---|
| Abstract | An electron beam has been used to control the transmission of 10.6-μm radiation in Ge, ZnSe, and CdTe samples. With an ∼2.5-A/cm2 20-ns pulse of ∼110-keV electrons incident on the semiconductor, the transmission falls abruptly, recovering in approximately the recombination time of the semiconductor. Carrier-absorption cross sections at 10.6 μm have been determined for CdTe and ZnSe. Semiconductor transmission switching provides a broad-bandwidth active isolator which may find applications in high-gain CO 2 laser systems. |
|---|
| Publication date | 1979 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 21276158 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 8b48fd5c-a97e-4796-ae88-95b5601a51e7 |
|---|
| Record created | 2015-09-28 |
|---|
| Record modified | 2020-03-13 |
|---|
