| Download | - View accepted manuscript: Structural and optical properties of axial silicon-germanium nanowire heterojunctions (PDF, 1.7 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.4937345 |
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| Author | Search for: Wang, X.; Search for: Tsybeskov, L.; Search for: Kamins, T. I.; Search for: Wu, X.; Search for: Lockwood, D. J.1 |
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| Affiliation | - National Research Council of Canada. Measurement Science and Standards
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| Format | Text, Article |
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| Subject | germanium; elemental semiconductors; photoluminescence; semiconductor insulator; semiconductor structures; Raman spectra |
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| Abstract | Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements. |
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| Publication date | 2015 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21277148 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8283ffbf-e8c6-4048-97e6-15b22e5c8bc9 |
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| Record created | 2015-12-18 |
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| Record modified | 2020-06-04 |
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