Photoluminescence in UHV-CVD-grown Si[1-x]Ge[x] quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress
Photoluminescence in UHV-CVD-grown Si[1-x]Ge[x] quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress
| DOI | Resolve DOI: https://doi.org/10.1016/S0040-6090(98)00466-0 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1998-05-26 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1115 |
| NPARC number | 5764357 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 8058f970-ff3d-48ed-addd-383cd1099f61 |
| Record created | 2009-03-29 |
| Record modified | 2020-03-20 |
- Date modified: