Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy
Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy
DOI | Resolve DOI: https://doi.org/10.1117/12.190759 |
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Sponsor | Search for: SPIE |
Format | Text, Article |
Conference | Second International Conference on Thin Film Physics and Applications, April 15-17, 1994, Shanghai, China |
ISSN | 0277-786X |
ISBN | 0819417084 |
Language | English |
NRC number | NRC-INMS-1093 |
NPARC number | 5765062 |
Export citation | Export as RIS |
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Record identifier | 730cfc20-4e33-4b58-b1f1-d093413dc670 |
Record created | 2009-03-29 |
Record modified | 2020-04-16 |
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