| DOI | Trouver le DOI : https://doi.org/10.1116/1.580033 |
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| Auteur | Rechercher : Allegretto, E. M.1; Rechercher : Bardwell, J. A.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | annealing; electrochemistry; ellipsometry; etching; hydrochloric acid; infrared spectra; oxidation; silicon oxides; thickness; thin films; voltage dependence |
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| Résumé | Anodic oxidation at constant voltage has been used to produce oxide films of thickness 10舑440 Å on Si(100). The electrolyte was 0.1 M HCl. Both annealed and as-grown samples were characterized by ellipsometry and Fourier transform infrared spectroscopy (FTIR), as well as by etch rate measurements in dilute HF. For as-grown samples, the voltage dependence of the thickness was determined. FTIR results for the as-grown films showed that the properties were dependent on the oxide thickness and not directly on the formation voltage. These results also provided a basis of comparison for the annealed samples. Demonstrably higher quality oxide films were characteristic of the annealed samples in comparison to the as-grown samples. The higher quality of the annealed samples was confirmed by measurement of the etch rate. |
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| Date de publication | 1996-06-30 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12327701 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | ff77f6c3-cc07-431c-b22c-d3f459a74d72 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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