| DOI | Trouver le DOI : https://doi.org/10.1002/1521-396X(200111)188:1<389::AID-PSSA389>3.0.CO;2-Q |
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| Auteur | Rechercher : Bardwell, J. A.1; Rechercher : Liu, Ying1; Rechercher : Rauhala, S.1; Rechercher : Bouwhuis, P.1; Rechercher : Marshall, P.1; Rechercher : Tang, H.1; Rechercher : Webb, J. B.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | The effect of a number of different treatments on the contact resistance for Ti/Al/Ti/Au (30/80/120/55 nm) contacts to Al0.3Ga0.7N (20 nm)/GaN HFET structures were investigated. The structures were grown by MBE. Neither preannealing of the surface at temperatures up to 1100 °C in N2, nor etching of the surface using chemically assisted ion beam etching (CAIBE) was effective in reducing the contact resistance. Both light CAIBE etching (≈5 nm) to partially remove the AlGaN layer, and deeper etching (≈50 nm and 100 nm) to remove the AlGaN and contact the GaN channel layer directly, resulted in a substantial increase in the measured contact resistance. The only treatment that was found to decrease the contact resistance was a brief wet etch in K2S2O8/KOH solution under 254 nm UV irradiation. A resist stabilization treatment was developed so that the process was self-aligned. The contact resistance in Ω mm was decreased by a factor of 1.7 for the optimum etch time. Scanning electron microscopy showed that the etching resulted in the formation of discrete holes perforating the AlGaN layer. |
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| Date de publication | 2001 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12338914 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | fd521c7e-3409-42c8-96ff-93fd068d3ff5 |
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| Enregistrement créé | 2009-09-11 |
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| Enregistrement modifié | 2020-03-27 |
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