| DOI | Trouver le DOI : https://doi.org/10.1063/1.1383068 |
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| Auteur | Rechercher : Alavi, Saman1; Rechercher : Seideman, Tamar1 |
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| Affiliation | - Conseil national de recherches Canada. Institut Steacie des sciences moléculaires du CNRC
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| Format | Texte, Article |
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| Sujet | chemical reactions; desorption; excited states; reaction kinetics; scanning tunnelling microscopy |
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| Résumé | We develop a theoretical framework for study of chemical dynamics induced by a scanning tunneling microscope. An analytically solvable limit of the expression derived for the reaction rate reveals the information content of the voltage dependence of the observable. The theory is applied to the problem of H-atom desorption from a silicon surface in the 4–10 V range, where desorption is triggered by a single electronic transition into a short-lived excited state localized on the H–Si bond. The resonance lifetime is extracted by fitting the numerical results to an observed desorption yield versus voltage curve. |
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| Date de publication | 2001-07-22 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12327610 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | fd0d9297-4f06-4bf2-8e33-105d892865a1 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-27 |
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