| DOI | Trouver le DOI : https://doi.org/10.1088/0953-4075/47/20/204025 |
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| Auteur | Rechercher : Golin, S.M.1; Rechercher : Kirkwood, S.E.2; Rechercher : Klug, D.D.2; Rechercher : Villeneuve, D.M.2; Rechercher : Rayner, D.M.2; Rechercher : Herrero, C.A.T.1; Rechercher : Corkum, P.B.2 |
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| Affiliation | - Conseil national de recherches Canada
- Conseil national de recherches Canada. Technologies de sécurité et de rupture
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| Format | Texte, Article |
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| Sujet | semiconductor materials; GaAs; strong field; ultra-fast; ionization |
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| Résumé | We demonstrated experimentally that the multiphoton ionization rate in gallium arsenide depends on the alignment of the laser polarization with respect to the crystal axis. We observed modulation in the ionization rate of a linearly-polarized 1900 nm laser beam directly by measuring its transmission while rotating the crystal, without Fourier analysis. We propose that the modulation in the ionization rate arises from periodic variation in the reduced carrier mass, as predicted by Keldysh theory. We show direct comparison of the experimental transmission modulation depth with Keldyshs non-resonant ionization theory for solids. This opens up a novel method for non-invasive crystallography of semiconductor materials. © 2014 IOP Publishing Ltd. |
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| Date de publication | 2014 |
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| Maison d’édition | IOP Publishing |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21276153 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | ee388b42-4349-4e7e-bee8-7a9290f5b33a |
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| Enregistrement créé | 2015-09-28 |
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| Enregistrement modifié | 2023-08-11 |
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