A Self-Directed Growth Process for Creating Covalently Bonded Molecular Assemblies on the H-Si(100)-3×1 Surface

DOI	Trouver le DOI : https://doi.org/10.1021/nl049796gS1530-6984(04)09796-6
Auteur	Rechercher : Tong, Xiaoshu¹; Rechercher : DiLabio, Gino²; Rechercher : Wolkow, Robert²
Affiliation	Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC Conseil national de recherches Canada. Institut national de nanotechnologie
Format	Texte, Article
Résumé	A chain reaction initiated at a dangling bond on a H-terminated Si(100)-3?1 surface leads to the creation of contiguous, linear multimolecular assemblies. In contrast to a similar growth process observed on the H-Si(100)-2?1 surface, the linear structures grow in the cross-row direction, rather than parallel to dimer rows. This process is enabled by both an uncommonly high rate of H atom diffusion, specifically in the cross-row direction, and a low barrier to H atom abstraction from dihydride sites. These results demonstrate that anisotropy inherent to the substrate can be imposed upon molecular assemblies formed via this "self-directed" growth process.
Date de publication	2004-05-12
Dans	Nano letters 4, nº 5 (12 mai 2004) : 979–983.
Numéro NPARC	12338016
Exporter la notice	Exporter en format RIS
Signaler une correction	Signaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement	e54dcc74-d0d1-43d0-bdc2-0a8cda951dc4
Enregistrement créé	2009-09-10
Enregistrement modifié	2020-04-17

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