| DOI | Trouver le DOI : https://doi.org/10.1063/1.367488 |
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| Auteur | Rechercher : Liu, H. C.1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | aluminium compounds; dark conductivity; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; interface states; photoconductivity; photodetectors; semiconductor quantum wells |
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| Résumé | We explore the possibility of covering the short wavelength infrared region using intersubband transitions in GaAs-based quantum wells. We investigate InGaAs wells with AlAs thin confining barriers. For this type of double-barrier resonant-final-state detectors, the dark current decreases with increasing detection wavelength. Photocurrents due to intersubband transition are observed down to a wavelength of about 1μm. The spectra also reveal interesting physical effects apparently related to the indirect band minima at the X point. The responsivity for the 3–4μmm detectors reaches up to 0.01 A/W; and the background limited temperature is in the range of 80–100 K. |
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| Date de publication | 1998-06-01 |
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| Dans | |
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| Numéro NPARC | 12327856 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | e512c4b6-8b69-4b6c-bcdc-e4fc2f018b2d |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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