| DOI | Trouver le DOI : https://doi.org/10.1116/1.582241 |
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| Auteur | Rechercher : Bardwell, Jennifer1; Rechercher : Dharma-Wardana, M1; Rechercher : Tang, Haipeng1; Rechercher : Webb, James2 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
- Conseil national de recherches Canada. Institut Steacie des sciences moléculaires du CNRC
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| Format | Texte, Article |
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| Sujet | aluminium compounds; carrier density; gallium compounds; III-VI semiconductors; infrared spectra; molecular beam epitaxial growth; nucleation; phonon-plasmon interactions; reflectivity; semiconductor epitaxial layers; semiconductor superlattices; wide band gap semiconductors |
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| Résumé | An infrared reflection technique has been developed for the characterization of GaN and GaN/AlGaN epitaxial layers and multilayers. The infrared light is brought to the III-nitride surface with a KRS-5 internal reflection crystal. The technique is complimentary to Raman measurements and provides information on the longitudinal and transverse optical (LO) modes of GaN and AlN. For thin GaN layers, the modes of the thin, 22-nm-thick AlN nucleation layer can be clearly observed in the spectra. The free carrier concentration of the GaN can be characterized by analyzing the LO phonon-plasmon coupled mode present in doped samples. Because the light is multiply reflected in the GaN layer, the technique can potentially detect impurities (such as H or C) in the GaN. The application of this technique to characterize high quality molecular beam epitaxial layers is discussed. |
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| Numéro NPARC | 12338179 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | d5cc95a1-d3f8-46af-aa8f-8e51b36ffae4 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-16 |
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