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Hybrid metallo-dielectric waveguide architecture for compact low-loss THz applications

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1109/LMWT.2024.3380445
AuteurRechercher : Identifiant ORCID : https://orcid.org/0000-0003-4093-584X; Rechercher : 1Identifiant ORCID : https://orcid.org/0000-0002-9383-3874; Rechercher : Identifiant ORCID : https://orcid.org/0000-0001-7442-1017
Affiliation
  1. Conseil national de recherches Canada. Technologies numériques
FormatTexte, Article
Sujetcompact bend; dielectric waveguide (DW); hybrid waveguide architecture; integrated terahertz (THz) circuits and systems; low loss; manufacturing simplicity; metallized-via-free; nonradiative dielectric (NRD) waveguide; dielectrics; terahertz radiation; electromagnetic waveguides; terahertz communications; loss measurement; bandwidth; insertion loss
Résumé
A hybrid metallo-dielectric waveguide (HMDW) architecture is studied and applied to the reduction of transition sizes over discontinuities, in turn the overall dimension of circuits and systems. The scheme is made of mixed dielectric waveguide (DW) and nonradiative dielectric (NRD) waveguide, which are, respectively, deployed for the design of specific building parts in consideration of respective transmission properties of the two waveguides. NRD waveguide with metallic covers is used over discontinuities, which allows for suppressing potential radiation and leakage effects, whereas DW is adopted along discontinuity-free segments to maintain a minimum transmission loss. A back-to-back guiding structure with four 90° bends covered by metal layers is demonstrated and experimentally validated in WR3-band. The simulated and measured insertion losses are comparable to their straight counterpart. With the NRD, the bend radius can be reduced by a factor of about 10, which enables the development of an extremely compact DW terahertz (THz) system. The presented metallized-via-free HMDW can be implemented in high-density integrated low-loss circuits and systems, which is critical in THz manufacturing process.
Date de publication
Maison d’éditionInstitute of Electrical and Electronics Engineers
Dans
  • IEEE Microwave and Wireless Technology Letters 34, nº 5 (mai 2024) : 486–489.
Langueanglais
Publications évaluées par des pairsOui
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Identificateur de l’enregistrementcdb48e23-0a03-41cc-9a38-d75fe4549a66
Enregistrement créé2024-07-03
Enregistrement modifié2024-07-04
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