Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using ZrOi-Pr)2(thd)2 and O2

Par Conseil national de recherches du Canada

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DOI	Trouver le DOI : https://doi.org/10.1149/1.1471891
Auteur	Rechercher : Chen, H. -W.; Rechercher : Huang, T. -Y.; Rechercher : Landheer, D.¹; Rechercher : Wu, X.¹; Rechercher : Moisa, S.¹; Rechercher : Sproule, G. I.¹; Rechercher : Chao, T. -S.
Affiliation	Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
Format	Texte, Article
Résumé	The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precursor Zr(OiPr)2(thd)2 [where OiPr is isopropoxide and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate] were investigated. The organometallic was dissolved as a 0.15 M solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390-550°C. No evidence of Zr-C and Zr-Si bonds were found in the X-ray photoelectron spectroscopy (XPS), spectra, and carbon concentrations, <0.1 atom %, the detection limit of the XPS depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the ZrO2 films to be polycrystalline as deposited, with an amorphous zirconium silicate interfacial layer. The effects of postdeposition annealing were also demonstrated. After proper annealing treatments, promising capacitance-voltage and current-voltage characteristics were achieved. A film with an equivalent oxide thickness of 2.3 nm showed current reductions of approximately two orders of magnitude when compared to SiO2, but some improvements are required if these films are to be used as a gate-insulator beyond the 100 nm CMOS (complementary metal oxide semiconductor) technology node.
Date de publication	2002
Dans	Journal of the Electrochemical Society 149, nº 6 (2002) : F49–F55.
Langue	anglais
Numéro NPARC	12744602
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Identificateur de l’enregistrement	c0577d88-50f2-45f6-afe2-b6916c2eb52a
Enregistrement créé	2009-10-27
Enregistrement modifié	2020-03-30

Date de modification :: 2025-12-09