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Electrostatic landscape of a hydrogen-terminated silicon surface probed by a moveable quantum dot

DOITrouver le DOI : https://doi.org/10.1021/acsnano.9b04653
AuteurRechercher : 1Identifiant ORCID : https://orcid.org/0000-0002-6876-8265; Rechercher : 1Identifiant ORCID : https://orcid.org/0000-0001-8146-8841; Rechercher : 1; Rechercher : 1; Rechercher : 1; Rechercher : 1Identifiant ORCID : https://orcid.org/0000-0001-9164-1556; Rechercher : 1
Affiliation
  1. Conseil national de recherches Canada. Nanotechnologie
FormatTexte, Article
Sujetdopant; kelvin probe force microscopy; dangling bond; surface electrostatics; quantum dot; hydrogen-terminated silicon; noncontact atomic force microscopy
Résumé
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the subnanometer scale. Using noncontact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain in the literature, and we suggest that its character is more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.
Date de publication
Maison d’éditionAmerican Chemical Society
Dans
  • ACS Nano 13, nº 9 : 10566–10575.
Langueanglais
Publications évaluées par des pairsOui
Exporter la noticeExporter en format RIS
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Identificateur de l’enregistrement9e86a92d-7ec6-43c2-9cee-ebc1020717d1
Enregistrement créé2021-03-02
Enregistrement modifié2021-03-02

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