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Scanning tunneling microscopy characterization of low-profile crystalline TiSi2 microelectrodes on a Si(111) surface

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1063/1.1922572
AuteurRechercher : ; Rechercher : 1
Affiliation
  1. Conseil national de recherches Canada. Institut national de nanotechnologie
FormatTexte, Article
Sujetannealing; electrical contacts; electrical resistivity; elemental semiconductors; microelectrodes; scanning tunnelling microscopy; semiconductor-insulator boundaries; silicon; surface reconstruction; thermal stability; titanium compounds
Résumé
Microscopic four-probe TiSi2 electrodes were fabricated on clean Si(111) surfaces and characterized using scanning tunneling microscopy with atomic resolution. The TiSi2 electrodes remained intact, and the clean Si(111)-7?7 structure was observed near the electrodes after annealing the Si substrate up to 1200 ?C. The TiSi2 electrodes were formed with a high density of large silicide plateaus. Each plateau was formed from stacked atomically flat layers comprised of atomic rows, which have been assigned as C54 phase with an epitaxial relation of TiSi2(311)||Si(111). The TiSi2 probes have the desired properties of very low profiles, low resistance, and thermal as well as chemical stability, thereby enabling the direct measurement of electrical transport properties of low-dimensional structures fabricated on clean Si surfaces.
Date de publication
Dans
  • Applied Physics Letters 86 (1 mai 2005) : 3101–.
Langueanglais
Publications évaluées par des pairsOui
Numéro NPARC12338137
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Identificateur de l’enregistrement8fe10924-3c91-4da7-b7cc-9f5a729070b3
Enregistrement créé2009-09-10
Enregistrement modifié2023-05-10
Date de modification :