| DOI | Trouver le DOI : https://doi.org/10.1109/ICIPRM.2000.850316 |
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| Auteur | Rechercher : Poole, P. J.1; Rechercher : Williams, R. L.1; Rechercher : Lefebvre, J.1; Rechercher : McCaffrey, J. P.2; Rechercher : Rowell, N.2 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
- Conseil national de recherches Canada. Institut des étalons nationaux de mesure du CNRC
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| Commanditaire | Rechercher : IEEE |
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| Format | Texte, Article |
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| Conférence | 2000 International Conference on Indium Phosphide and Related Materials, 14-18 May 2000, Williamsburg, Virginia, USA |
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| Résumé | We have used transmission electron microscopy and low temperature photoluminescence to study the growth by chemical beam epitaxy of self-assembled InAs/InP quantum dots. Square dots 30-40 nm in width were grown with a density of 1010 cm-2. By partially covering the dots with InP and exposing them to a phosphorus overpressure the mean height of the dots, and hence their emission energies, could be controlled. The emission energy was found to be strongly dependent on the amount of InP used to partially cover the InAs dots, but only weakly dependent on the phosphorus exposure time for times greater than 15 sec |
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| Date de publication | 2000 |
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| Dans | |
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| Langue | anglais |
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| Numéro du CNRC | NRC-INMS-1101 |
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| Numéro NPARC | 5765181 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8fb9c1ac-8a6c-4104-bcce-e8ade17f0c1b |
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| Enregistrement créé | 2009-03-29 |
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| Enregistrement modifié | 2020-03-26 |
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