| DOI | Trouver le DOI : https://doi.org/10.1109/ICMENS.2004.1509004 |
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| Auteur | Rechercher : Grant, P. D.1; Rechercher : Denhoff, M. W.1; Rechercher : Mansour, R. R. |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | The 2004 International Conference on MEMS, NANO and Smart Systems, ICMENS 2004, August 25-27, 2014, Banff, Alberta, Canada |
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| Sujet | radiofrequency microelectromechanical systems; switches; radio frequency; capacitance; insertion loss; transmission lines; performance analysis; performance loss; MESFETs; P-i-n diodes |
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| Résumé | This paper addresses the fundamentals of RF switches providing a comparison between semiconductor and RF MEMS switches. The basis of comparison is introduced by defining a figure of merit that is a function of the off-state capacitance and the on-state resistance. A simple transmission line model is presented to illustrate the impact of the switch off-state capacitance on the switch isolation and frequency range of operation. The figure of merit analysis given in this paper demonstrates that RF MEMS switches have superior insertion loss and isolation performance in comparison to MESFET and p-i-n diode switches. The paper also addresses several other design considerations beside insertion loss and isolation for selecting the right RF switch. A discussion is given on the potential use of RF MEMS switches in satellite and wireless applications. |
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| Date de publication | 2004-08-25 |
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| Maison d’édition | IEEE |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12346738 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8e3d2f0d-f0de-4d4a-979d-09222752c8ef |
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| Enregistrement créé | 2009-09-17 |
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| Enregistrement modifié | 2023-11-07 |
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