| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-373-511 |
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| Auteur | Rechercher : Simpson, T. W.; Rechercher : Love, D.; Rechercher : Endisch, D.; Rechercher : Goldberg, R. D.; Rechercher : Mitchell, I. V.; Rechercher : Haynes, T. E.; Rechercher : Baribeau, J.-M.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1994 MRS Fall Meeting: Symposium Y: Microstructure of Irradiated Materials, November 29 - December 1, 1994, Boston, MA |
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| Résumé | We have examined the damage produced by Si-ion implantation into strained Si₁₋ₓGeₓ epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channelling techniques to determine the amorphization threshold in strained Si₁₋ₓGeₓ, (x = 0.16 and 0.29) over the temperature range 30-110°C. The results are compared with previously reported measurements on unstrained Si₁₋ₓGeₓ, and with the simple model used to describe those results. We report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer. |
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| Date de publication | 1995 |
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| Dans | |
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| Série | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12339341 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 89f7d215-f251-4818-a9e0-8233ed7aa355 |
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| Enregistrement créé | 2009-09-11 |
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| Enregistrement modifié | 2020-04-29 |
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