| DOI | Trouver le DOI : https://doi.org/10.1016/0039-6028(94)00725-X |
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| Auteur | Rechercher : Xia, H.; Rechercher : Lennard, W. N.; Rechercher : Massoumi, G. R.; Rechercher : van Eck, J. J. J.; Rechercher : Huang, L. J.; Rechercher : Lau, W. M.; Rechercher : Landheer, D.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | Chalcogens; Gallium arsenide; High energy ion scattering (HEIS); Ion-solid interactions; Low index single crystal surfaces; Sulphides |
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| Résumé | Particle-induced X-ray emission measurements combined with Rutherford backscattering spectrometry (including channeling) have been used to measure directly the total sulphur coverage for the S-passivated GaAs(100) surface. The ion-induced X-ray measurements show that 1.1 ML (1 ML = 6.26 × 1014 cm−2) of S is found on GaAs(100) after passivation with (NH4)2S, while only 0.55 ML of S is present on the H2Sx-treated GaAs(100) surface. A clearer picture of the S-covered GaAs(100) surface emerges from a consideration of these data in conjunction with current models encompassing surface dimers. |
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| Date de publication | 1995-02-10 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12328783 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 79609157-b2b7-4393-909d-913ac5e4dbbe |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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