| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-399-413 |
|---|
| Auteur | Rechercher : Lafontaine, H.1; Rechercher : Houghton, D.C.1; Rechercher : Bahierathan, B.; Rechercher : Perovic, D.D.; Rechercher : Baribeau, J.-M.1 |
|---|
| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
|---|
| Format | Texte, Article |
|---|
| Conférence | 1995 MRS Fall Meeting: Symposium D: Evolution of Epitaxial Structure and Morphology, November 27-December 1, 1995, Boston, Massachusetts, U.S.A. |
|---|
| Résumé | Several Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3. |
|---|
| Date de publication | 1996-07-02 |
|---|
| Dans | |
|---|
| Série | |
|---|
| Publications évaluées par des pairs | Oui |
|---|
| Numéro NPARC | 12327236 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | 76b224bc-090a-48fc-b90f-4d37e7ee82ea |
|---|
| Enregistrement créé | 2009-09-10 |
|---|
| Enregistrement modifié | 2020-03-20 |
|---|
