| DOI | Trouver le DOI : https://doi.org/10.1063/1.5023596 |
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| Auteur | Rechercher : Studenikin, S. A.1; Rechercher : Gaudreau, L.1; Rechercher : Kataoka, K.1; Rechercher : Austing, D. G.; Rechercher : Sachrajda, A. S.1 |
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| Affiliation | - Conseil national de recherches Canada. Technologies de sécurité et de rupture
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| Format | Texte, Article |
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| Résumé | We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ∼2% in the sensor current. |
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| Date de publication | 2018-06-04 |
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| Maison d’édition | AIP Publishing |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23003613 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 6fd9454e-e9c0-4c71-81bd-7c717c079fe1 |
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| Enregistrement créé | 2018-07-25 |
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| Enregistrement modifié | 2020-03-16 |
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