| DOI | Trouver le DOI : https://doi.org/10.1063/1.371814 |
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| Auteur | Rechercher : Dupont, Emmanuel1; Rechercher : Liu, H.; Rechercher : Yang, Rui |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | electroluminescence; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; light emitting diodes; light polarisation; quantum well devices |
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| Résumé | We report an experimental investigation of polarization dependence of mid-infrared electroluminescence from type-II InAs/GaInSb interband cascade devices. The in-plane polarized emission was found to be dominant from a laser structure, supporting the assertion based on the conventional k�p theory. The observed electroluminescences from the light-emitting diodes were found to be nearly independent of polarization. These experimental results have been discussed along with theoretical calculations based the conventional k�p theory. |
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| Date de publication | 1999-12-15 |
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| Dans | |
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| Numéro NPARC | 12333712 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 643b0fb5-0129-42f6-b1f7-6e36ade51605 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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