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Photoluminescence in UHV/CVD tensile-strained Si type-II quantum wells on bulk crystal SiGe substrates

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1557/PROC-744-M8.27
AuteurRechercher : 1; Rechercher : 2; Rechercher : 1
Affiliation
  1. Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
  2. Conseil national de recherches du Canada. Institut des étalons nationaux de mesure du CNRC
CommanditaireRechercher : MRS
FormatTexte, Article
Conférence2002 MRS Fall Meeting - Symposium M - Progress in semiconductors II - Electronic and Optoelectronic Applications, 2-5 December 2002, Boston, Massachusetts, USA
Résumé
Near band-edge photoluminescence (PL) in high-quality UHV/CVD tensile-strained Si type-II quantum wells (QWs) with varying well width grown on bulk crystal SiGe substrates has been studied. In contrast to the blue-shifts observed in the PL lines of Si1-xGex QWs on Si, the PL lines of Si QWs exhibit red-shifts with increasing excitation density. The PL from the SiGe substrate shows no such shift. The PL red-shifts decrease as the well width decreases, and are essentially independent of temperature up to 15K where a transition from bound exciton emission to higher energy free exciton emission occurs. The rapid thermal annealing (RTA) was found to improve the crystal quality of the samples. RTA enhances the integrated PL intensity, results in narrowing and blue-shifting of PL bands, and reduces the exponent in the excitation power dependence as well as the amount of red-shifting at a given excitation density. Possible mechanisms for the observed shifts to lower energies of the PL lines with excitation density were examined, including band bending, band-filling, and binding of excitons to impurities.
Date de publication
Dans
  • Progress in semiconductors II: electronic and optoelectronic applications, M8.27 (2003).
Série
  • Materials Research Society Symposia Proceedings, nº 744.
Langueanglais
Publications évaluées par des pairsOui
Numéro du CNRCNRC-INMS-1376
Numéro NPARC5763668
Exporter la noticeExporter en format RIS
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Identificateur de l’enregistrement602d978b-9a4f-4839-bc71-d7c9eed844ca
Enregistrement créé2009-03-29
Enregistrement modifié2020-04-02
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