Light emission in silicon nanostructures

DOI	Trouver le DOI : https://doi.org/10.1007/s10854-007-9552-6
Auteur	Rechercher : Lockwood, David¹
Affiliation	Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
Format	Texte, Article
Conférence	Second International Conference on Optical, Optoelectronic and Photonic Materials and Applications, 2007, 30 July – 3 August 2007, London, UK
Résumé	The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.
Date de publication	2009
Dans	Journal of Materials Science: Materials in Electronics 20, nº Supplement 1 (2009) : 235–244.
Langue	anglais
Numéro NPARC	12441084
Exporter la notice	Exporter en format RIS
Signaler une correction	Signaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement	520fe673-ef6f-45b1-b27a-3624642daa45
Enregistrement créé	2009-09-25
Enregistrement modifié	2020-04-16

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