| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-427-541 |
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| Auteur | Rechercher : Das, S. R.1; Rechercher : Xu, D.-X.1; Rechercher : Nournia, M.1; Rechercher : Lebrun, L.1; Rechercher : Naem, A. |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1996 MRS Spring Meeting: Symposium K: Advanced Metallization for Future ULSI, April 8-12, 1996, San Francisco, CA, USA |
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| Résumé | In view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness. |
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| Date de publication | 1996 |
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| Série | |
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| Langue | anglais |
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| Numéro NPARC | 12328208 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 4b112de2-8384-4fda-9c99-b1fc920ebc13 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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