| DOI | Trouver le DOI : https://doi.org/10.1109/68.334811 |
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| Auteur | Rechercher : Fallahi, M.1; Rechercher : Dion, M.2; Rechercher : Chatenoud, F.1; Rechercher : Templeton, I. M.1; Rechercher : Barber, R.1; Rechercher : Sedivy, J. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
- Conseil national de recherches du Canada
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| Format | Texte, Article |
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| Sujet | 26 mA; 977 nm; circular-grating surface-emitting DBR lasers; CW operation; CW threshold current; diffraction gratings; gallium arsenide; III-V semiconductors; indium compounds; InGaAs/GaAs strained multiquantum-well; InGaAs-GaAs; lasing wavelength; low threshold CW operation; material system; modified fabrication process; MQW; optical fabrication; quantum well lasers; room temperature continuous wave operation; self-aligned process; surface emitting lasers |
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| Résumé | In this letter, we present the first room temperature continuous wave operation of circular-grating surface-emitting DBR lasers. The structure is an InGaAs/GaAs strained multiquantum-well. A modified fabrication process with a better control on the steps is used. A CW threshold current as low as 26 mA at a lasing wavelength of about 977 mm are reported. This is the first demonstration of CW operation for these lasers in any material system |
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| Date de publication | 1994 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12327511 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 45ddce8d-f55e-40be-a2b8-b8d33efd1873 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-27 |
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