| DOI | Trouver le DOI : https://doi.org/10.1016/0039-6028(96)00571-7 |
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| Auteur | Rechercher : Furneaux, J. E.; Rechercher : Kravchenko, S. V.; Rechercher : Mason, Whitney; Rechercher : Pudalov, V. M.; Rechercher : D'Iorio, M.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995 |
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| Sujet | Electrical transport; Metal-oxide-semiconductor (MOS) structures; Silicon |
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| Résumé | The resistivity of a two-dimensional electron system in silicon at low electron densities was empirically found to scale with a single parameter, T0, which approaches zero at some critical electron density, nc, and increases as a power T0 ∞ ns − ncv with v = 1.6 ± 0.1 both in metallic (ns > nc) and insulating (ns < nc) regions. This behavior suggests a true metal/insulator transition in the two-dimensional electron system in silicon at B = 0, in contrast with the well-known scaling theory. |
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| Date de publication | 1996-07-20 |
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| Série | |
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| Langue | anglais |
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| Numéro NPARC | 12337989 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 43938f37-304f-4bd8-b11c-5075454f39cf |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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