| DOI | Trouver le DOI : https://doi.org/10.1109/3.283794 |
|---|
| Auteur | Rechercher : Agahi, Farid; Rechercher : Lau, Kei May; Rechercher : Koteles, Emil S.1; Rechercher : Baliga, Arvind; Rechercher : Anderson, Neal G. |
|---|
| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
|
|---|
| Format | Texte, Article |
|---|
| Sujet | III-V semiconductors; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth |
|---|
| Résumé | An investigation of GaAs QW's with tensile-strained GaAsP barriers grown on GaAs substrates by organometallic vapor phase epitaxy is reported. We demonstrate that this system permits light- and heavy-hole valence bands to be approximately merged within a wide range of well widths and strains, thereby increasing the yield of devices requiring these characteristics. A few series of quantum wells with three phosphorus compositions (6%, 9%, and 19%) were grown and studied by photoluminescence and polarized photoluminescence excitation spectroscopy. We compared our experimentally determined conduction band to heavy-hole and light-hole transition energies with finite potential well calculations utilizing a previously developed strain dependent band offset model. We obtained excellent agreement between experimental and calculated results without any adjustment or fitting of parameters |
|---|
| Date de publication | 1994-02 |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Numéro NPARC | 12328459 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | 401e21b9-68fd-474e-84fe-c8f49e6cd101 |
|---|
| Enregistrement créé | 2009-09-10 |
|---|
| Enregistrement modifié | 2020-04-27 |
|---|
