Intermediate range chemical ordering in amorphous and liquid water, Si, and Ge

DOI	Trouver le DOI : https://doi.org/10.1103/PhysRevB.72.132201
Auteur	Rechercher : Benmore, C. J.; Rechercher : Hart, R. T.; Rechercher : Mei, Q.; Rechercher : Price, D. L.; Rechercher : Yarger, J.; Rechercher : Tulk, C. A.; Rechercher : Klug, D. D.¹
Affiliation	Conseil national de recherches Canada. Institut Steacie des sciences moléculaires du CNRC
Format	Texte, Article
Sujet	amorphous semiconductors; amorphous state; density; elemental semiconductors; germanium; interstitials; liquid semiconductors; liquid structure; neutron diffraction; noncrystalline structure; silicon; water; X-ray diffraction
Résumé	Neutron and x-ray diffraction data for low, high, and very high density amorphous ice and liquid water, silicon, and germanium have been compared in terms of the first sharp diffraction peak in the structure factor and at the radial distribution function level. The low and high density forms of H2O, Si, and Ge are shown to have very similar structures if the contributions from the hydrogen correlations in water are neglected. The very high density amorphous ice form is shown to be structurally analogous to recently reported high pressure liquid forms of Si and Ge, although there are slight differences in the way interstitial atoms or molecules are pushed into the first coordination shell.
Date de publication	2005-10-04
Dans	Physical Review. B, Condensed Matter and Materials Physics 72, nº 13 (4 octobre 2005) : 132201-1–132201-4.
Langue	anglais
Numéro NPARC	12327321
Exporter la notice	Exporter en format RIS
Signaler une correction	Signaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement	2e44808b-8ea3-407a-af69-387cb5bc21ec
Enregistrement créé	2009-09-10
Enregistrement modifié	2020-04-07

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Date de modification :: 2026-06-09