| DOI | Trouver le DOI : https://doi.org/10.1109/LEOS.1996.571583 |
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| Auteur | Rechercher : Guptal, V. K.; Rechercher : Williams, R. L.1; Rechercher : Wasilewski, Z. R.1; Rechercher : Dion, M.1; Rechercher : Aers, G. C.1; Rechercher : Norman, C. E. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | 1.3 mum; 1.55 mum; gallium arsenide; III-V semiconductors; indium compounds; indium migration; InGaAs/InAlAs QWs; InGaAs-InAlAs; InGaAs-InAlAs single quantum wells; laser transitions; long wavelength integrated optoelectronic devices; MBE growth; molecular beam epitaxial growth; optical fibre communication; optical fibre communication systems; optical transmitters; optoelectronic device applications; patterned InP substrates; quantum well lasers; selective area bandgap control; semiconductor growth; semiconductor lasers |
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| Résumé | Semiconductor lasers emitting at 1.3 ?m and 1.55 ?m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quantum wells grown by MBE on patterned InP substrates for the fabrication of long wavelength integrated optoelectronic devices |
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| Numéro NPARC | 12328900 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 2a3f4bc0-cc8d-4023-8eb3-46b35832439f |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-16 |
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