High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy

Par Conseil national de recherches du Canada

DOI	Trouver le DOI : https://doi.org/10.1116/1.588789
Auteur	Rechercher : Driad, R.; Rechercher : Alexandre, F.; Rechercher : Juhel, M.; Rechercher : Launay, P.
Format	Texte, Article
Sujet	annealing; bipolar transistors; carbon additions; comparative evaluations; doped materials; epitaxial layers; gallium arsenides; gallium phosphides; heterojunctions; indium phosphides; performance; temperature range 400 - 1000 k; thermodynamic properties
Résumé	We report the improved thermal stability of heavily C-doped GaAs layers using atomic layer chemical beam epitaxy (ALCBE). The use of ALCBE improves the crystal quality and reduces hydrogen incorporation in the epilayers by about a factor of 2, resulting in enhanced electrical dopant activity as compared to conventional growth techniques. This process has been successfully applied to the fabrication of InGaP/GaAs heterojunction bipolar transistors (HBTs) with a highly C-doped base grown by ALCBE and other layers grown by conventional CBE. Dc current gains up to 150, for a base doping layer of 3 � 1019 cm � 3, have been obtained. Moreover, the thermal stability of these devices is increased, as indicated by a post-growth annealing (650�C, 60 min) which induces only a slight current gain degradation of about 20% at high collector currents, to be compared to a degradation of 60% for HBTs conventionally grown by CBE.
Date de publication	1996-10-31
Dans	Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures Processing, Measurement and Phenomena 14, nº 6 : 3509–3513.
Langue	anglais
Publication du CNRC	Cette publication n’est pas du CNRC Ce sont des publications qui ont été rédigées par un auteur du CNRC, mais avant que celui-ci soit employé du CNRC.
Numéro NPARC	12327093
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Identificateur de l’enregistrement	24eae43b-d18b-4b20-a331-449b0f15a817
Enregistrement créé	2009-09-10
Enregistrement modifié	2020-03-20

Date de modification :: 2026-01-17